Frequency doubling using spacer mask

Invention Grant

US07807578B2 Frequency doubling using spacer mask 失效

Title translation: 使用间隔掩模倍频

Please log in to see more content

Patent Title: Frequency doubling using spacer mask
Patent Title (中): 使用间隔掩模倍频
Application No.: US11875250

Application Date: 2007-10-19
Publication No.: US07807578B2

Publication Date: 2010-10-05
Inventor: Christopher D. Bencher , Keiji Horioka
Applicant: Christopher D. Bencher , Keiji Horioka
Applicant Address: US CA Santa Clara
Assignee: Applied Materials, Inc.
Current Assignee: Applied Materials, Inc.
Current Assignee Address: US CA Santa Clara
Agency: Blakely Sokoloff Taylor & Zafman LLP
Main IPC: H01L21/311
IPC: H01L21/311

Abstract:

A method for fabricating a semiconductor mask is described. A semiconductor stack having a sacrificial mask and a spacer mask is first provided. The sacrificial mask is comprised of a series of lines and the spacer mask has spacer lines adjacent to the sidewalls of the series of lines. Next, the spacer mask is cropped. Finally, the sacrificial mask is removed to provide a cropped spacer mask. The cropped spacer mask doubles the frequency of the series of lines of the sacrificial mask.

Abstract(Chinese):

对半导体掩模的制造方法进行说明。首先提供具有牺牲掩模和间隔掩模的半导体叠层。牺牲掩模由一系列线组成，并且间隔物掩模具有与该系列线的侧壁相邻的间隔线。接下来，裁剪间隔掩模。最后，去除牺牲掩模以提供裁剪的间隔物掩模。裁剪的间隔掩模将牺牲掩模的一系列线的频率加倍。

Public/Granted literature

US20080299776A1 FREQUENCY DOUBLING USING SPACER MASK Public/Granted day:2008-12-04

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀