Invention Grant
- Patent Title: Method of forming a stressed passivation film using a non-ionizing electromagnetic radiation-assisted oxidation process
- Patent Title (中): 使用非电离电磁辐射辅助氧化工艺形成应力钝化膜的方法
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Application No.: US12058570Application Date: 2008-03-28
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Publication No.: US07807586B2Publication Date: 2010-10-05
- Inventor: Robert D Clark
- Applicant: Robert D Clark
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
A method for forming a stressed passivation film. In one embodiment, the method includes depositing a silicon nitride film over an integrated circuit structure on a substrate and embedding oxygen into a surface of the silicon nitride film by exposing the silicon nitride film to a process gas containing oxygen radicals formed by non-ionizing electromagnetic radiation induced dissociation of an oxygen-containing gas or an oxygen- and nitrogen-containing gas. The method further includes heat-treating the oxygen-embedded silicon nitride film to form a stressed silicon oxynitride film.
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