Invention Grant
US07807997B2 Test element group (TEG) system for measurement of SOI-MOSFET without a body contact comprising first and second TEGs of unequal gate electrode areas
失效
用于测量不具有人体接触的SOI-MOSFET的测试元件组（TEG）系统，包括不等栅电极区域的第一和第二TEG
- Patent Title: Test element group (TEG) system for measurement of SOI-MOSFET without a body contact comprising first and second TEGs of unequal gate electrode areas
- Patent Title (中): 用于测量不具有人体接触的SOI-MOSFET的测试元件组（TEG）系统，包括不等栅电极区域的第一和第二TEG
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Application No.: US11896688Application Date: 2007-09-05
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Publication No.: US07807997B2Publication Date: 2010-10-05
- Inventor: Osamu Yamaguchi
- Applicant: Osamu Yamaguchi
- Applicant Address: JP Tokyo
- Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee: Oki Semiconductor Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Rabin & Berdo, P.C.
- Priority: JP2006-262209 20060927
- Main IPC: H01L23/58
- IPC: H01L23/58 ; G01R31/26
Abstract:
Two TEGs are used for acquiring FET capacity. A first TEG includes a first base section of the same shape and same dimensions as a gate electrode of the FET whose capacity is to be acquired, and a first additional section added at one end of the first base section. A second TEG includes a second base section of the same shape and same dimensions as the first base section, a second additional section having the same shape and same dimensions as the first additional section and added to one end of the second base section, and a third additional section having the same shape and same dimensions as the second additional section and added to the other end of the second base section. The capacity between the body and source or between the body and drain of the FET whose capacity is to be acquired is estimated from the difference in capacity between the body and source or between the body and drain of the first TEG and second TEG.
Public/Granted literature
- US20080076196A1 TEG system for acquiring FET capacity and method of capacity acquisition Public/Granted day:2008-03-27
Information query
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