Invention Grant
- Patent Title: Lateral MOSFET and manufacturing method thereof
- Patent Title (中): 横向MOSFET及其制造方法
-
Application No.: US12036907Application Date: 2008-02-25
-
Publication No.: US07808021B2Publication Date: 2010-10-05
- Inventor: Jun Tamura
- Applicant: Jun Tamura
- Applicant Address: JP Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sughrue Mion, PLLC
- Priority: JP2007-046381 20070227
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336
Abstract:
A lateral MOSFET according to the present invention has a trench gate structure having a cross sectional shape spreading toward an open end. The cross sectional shape is T-shape. The T-shaped cross section has a dimensional ratio of a width of a lower trench having a narrow width to a width of an upper trench having a wide width of 1:3, and a dimensional ratio of a depth of the lower trench to a depth of the upper trench of 1:1, the lower trench width having a same central axis as the upper trench width.
Public/Granted literature
- US20080203472A1 LATERAL MOSFET AND MANUFACTURING METHOD THEREOF Public/Granted day:2008-08-28
Information query
IPC分类:
