Invention Grant
US07808034B1 Non-volatile memory cell with fully isolated substrate as charge storage
有权
具有完全隔离的基板作为电荷存储的非易失性存储单元
- Patent Title: Non-volatile memory cell with fully isolated substrate as charge storage
- Patent Title (中): 具有完全隔离的基板作为电荷存储的非易失性存储单元
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Application No.: US11652783Application Date: 2007-01-12
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Publication No.: US07808034B1Publication Date: 2010-10-05
- Inventor: Jeff Babcock , Natasha Layrovskava , Yuri Mirgorodski , Saurahh Desai
- Applicant: Jeff Babcock , Natasha Layrovskava , Yuri Mirgorodski , Saurahh Desai
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Vollrath & Associates
- Agent Jurgen K. Vollrath
- Main IPC: H01L21/82
- IPC: H01L21/82
Abstract:
In a non-volatile memory cell, charge is stored in a fully isolated substrate or floating bulk that forms a storage capacitor with a first poly strip and includes a second poly strip defining a control gate and a third poly strip coupled to a read transistor gate.
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