Invention Grant
- Patent Title: SOI transistor with merged lateral bipolar transistor
- Patent Title (中): 具有合并横向双极晶体管的SOI晶体管
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Application No.: US12099879Application Date: 2008-04-09
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Publication No.: US07808039B2Publication Date: 2010-10-05
- Inventor: Jin Cai , Jeffrey B. Johnson , Tak H. Ning , Robert R. Robison
- Applicant: Jin Cai , Jeffrey B. Johnson , Tak H. Ning , Robert R. Robison
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Carey Rodriguez Greenberg & Paul LLP
- Agent Robert M. Trepp, Esq.; Steven M. Greenberg, Esq.
- Main IPC: H01L27/088
- IPC: H01L27/088
Abstract:
A semiconductor-on-insulator transistor device includes a source region, a drain region, a body region, and a source-side lateral bipolar transistor. The source region has a first conductivity type. The body region has a second conductivity type and is positioned between the source region and the drain region. The source-side lateral bipolar transistor includes a base, a collector, and an emitter. A silicide region connects the base to the collector. The emitter is the body region. The collector has the second conductivity type, and the base is the source region and is positioned between the emitter and the collector.
Public/Granted literature
- US20090256204A1 SOI TRANSISTOR WITH MERGED LATERAL BIPOLAR TRANSISTOR Public/Granted day:2009-10-15
Information query
IPC分类:
