Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11958360Application Date: 2007-12-17
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Publication No.: US07808076B2Publication Date: 2010-10-05
- Inventor: Kazushi Kono , Takeshi Iwamoto , Hisayuki Kato , Shigeki Obayashi , Toshiaki Yonezu
- Applicant: Kazushi Kono , Takeshi Iwamoto , Hisayuki Kato , Shigeki Obayashi , Toshiaki Yonezu
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2007-002685 20070110
- Main IPC: H01L29/00
- IPC: H01L29/00
Abstract:
The semiconductor device which has an electric straight line-like fuse with a small occupying area is offered.A plurality of projecting portions 10f are formed in the position shifted from the middle position of electric fuse part 10a, and, more concretely, are formed in the position distant from via 10e and near via 10d. A plurality of projecting portions 20f are formed in the position shifted from the middle position of electric fuse part 20a, and, more concretely, are formed in the position distant from via 20d and near 20e. That is, projecting portions 10f and projecting portions 20f are arranged in the shape of zigzag.
Public/Granted literature
- US20080164969A1 SEMICONDUCTOR DEVICE Public/Granted day:2008-07-10
Information query
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