Invention Grant
- Patent Title: Semiconductor integrated circuit device
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Application No.: US12453383Application Date: 2009-05-08
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Publication No.: US07808107B2Publication Date: 2010-10-05
- Inventor: Masao Shinozaki , Kenji Nishimoto , Takashi Akioka , Yutaka Kohara , Sanae Asari , Shusaku Miyata , Shinji Nakazato
- Applicant: Masao Shinozaki , Kenji Nishimoto , Takashi Akioka , Yutaka Kohara , Sanae Asari , Shusaku Miyata , Shinji Nakazato
- Applicant Address: JP Kanagawa JP Tokyo
- Assignee: Renesas Electronics Corporation,Hitachi ULSI Systems Co., Ltd.
- Current Assignee: Renesas Electronics Corporation,Hitachi ULSI Systems Co., Ltd.
- Current Assignee Address: JP Kanagawa JP Tokyo
- Agency: Stites & Harbison PLLC
- Agent Juan Carlos A. Marquez, Esq.
- Priority: JP2000-383728 20001218; JP2001-161630 20010530
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
Circuit elements and wirings constituting a circuit, and first electrodes electrically connected to such a circuit are provided on one main surface of a semiconductor substrate. An organic insulating film is formed on the circuit except for openings on the surfaces of the first electrodes. First and second external connecting electrodes are provided on the organic insulating film. At least one conductive layer for electrically connecting the first and second external connecting electrodes and the first electrodes is placed on the organic insulating film.
Public/Granted literature
- US20090219069A1 Semiconductor integrated circuit device Public/Granted day:2009-09-03
Information query
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