Invention Grant
- Patent Title: Apparatus and method for controlling voltage of semiconductor integrated circuit
- Patent Title (中): 用于控制半导体集成电路电压的装置和方法
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Application No.: US12329040Application Date: 2008-12-05
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Publication No.: US07808297B2Publication Date: 2010-10-05
- Inventor: Tae-Yong Lee
- Applicant: Tae-Yong Lee
- Applicant Address: KR
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR
- Agency: Baker & McKenzie LLP
- Priority: KR10-2008-0022760 20080312
- Main IPC: H03K17/62
- IPC: H03K17/62

Abstract:
A device for controlling a voltage of a semiconductor integrated circuit includes a voltage selecting unit that generates a voltage selecting signal for selecting a voltage to be controlled among a plurality of voltages by using a first control signal, a control step selecting unit that generates a control step selection signal for selecting a control step of the voltage to be controlled by using a second control signal, and a voltage controlling unit that controls a level of the voltage to be controlled among the plurality of voltages in response to the control step selection signal.
Public/Granted literature
- US20090230943A1 APPARATUS AND METHOD FOR CONTROLLING VOLTAGE OF SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2009-09-17
Information query
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