Invention Grant
- Patent Title: Low-voltage band-gap reference voltage bias circuit
- Patent Title (中): 低压带隙基准电压偏置电路
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Application No.: US11945708Application Date: 2007-11-27
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Publication No.: US07808305B2Publication Date: 2010-10-05
- Inventor: Young Ho Kim , Seong Soo Park
- Applicant: Young Ho Kim , Seong Soo Park
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Ladas & Parry LLP
- Priority: KR10-2006-0123884 20061207
- Main IPC: G05F1/10
- IPC: G05F1/10 ; G05F3/02

Abstract:
A low-voltage band-gap reference voltage bias circuit is provided. In the low-voltage band-gap reference voltage bias circuit, a proportional-to-absolute temperature (PTAT) current is copied to two nodes, respectively, to generate a first voltage having a negative slope with respect to temperature variation, and a second voltage having a positive slope with respect to temperature variation, and first and second elements having high impedances are serially connected to each other between the two nodes, such that the sum of the negative slope of the first voltage and the positive slope of the second voltage is zero and an average voltage between the two nodes is extracted to output the extracted result as a reference voltage. Accordingly, a stable reference voltage of 1V or lower regardless of a power supply voltage and temperature variation can be supplied.
Public/Granted literature
- US20080136504A1 LOW-VOLTAGE BAND-GAP REFERENCE VOLTAGE BIAS CIRCUIT Public/Granted day:2008-06-12
Information query
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