Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11257145Application Date: 2005-10-25
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Publication No.: US07808698B2Publication Date: 2010-10-05
- Inventor: Tomoyuki Akiyama
- Applicant: Tomoyuki Akiyama
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2005-102946 20050331
- Main IPC: H04B10/17
- IPC: H04B10/17

Abstract:
A semiconductor device including a semiconductor optical amplifier in which a photodetector is integrated without causing power loss at a low cost. The semiconductor device includes a semiconductor substrate, a semiconductor optical waveguide, at least partly capable of functioning as a semiconductor optical amplifier, to guide signal light, and a photodetector provided in a region other than a region where the semiconductor optical waveguide is provided, wherein the semiconductor optical waveguide and the photodetector are integrated on the semiconductor substrate.
Public/Granted literature
- US20060221438A1 Semiconductor device Public/Granted day:2006-10-05
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