Invention Grant
US07808846B2 Semiconductor memory device 有权
半导体存储器件

Semiconductor memory device
Abstract:
A semiconductor memory device to/from which a data signal is input/output in synchronism with a clock, including: an input signal delaying circuit for delaying an input signal to output the delayed input signal; a delayed clock generation circuit for delaying an input clock by different amounts of delay time to thereby generate a plurality of delayed clocks; a plurality of delayed input signal holding circuits for holding the delayed input signal on the plurality of delayed clocks, respectively; an input signal latch timing determination circuit for outputting a determination signal indicating a timing at which to latch the delayed input signal, based on a plurality of held signals held by the delayed input signal holding circuits; and a held signal selector circuit for integrating the plurality of held signals into a single signal.
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