Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US12187803Application Date: 2008-08-07
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Publication No.: US07808846B2Publication Date: 2010-10-05
- Inventor: Tadashi Nitta
- Applicant: Tadashi Nitta
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2007-207671 20070809
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A semiconductor memory device to/from which a data signal is input/output in synchronism with a clock, including: an input signal delaying circuit for delaying an input signal to output the delayed input signal; a delayed clock generation circuit for delaying an input clock by different amounts of delay time to thereby generate a plurality of delayed clocks; a plurality of delayed input signal holding circuits for holding the delayed input signal on the plurality of delayed clocks, respectively; an input signal latch timing determination circuit for outputting a determination signal indicating a timing at which to latch the delayed input signal, based on a plurality of held signals held by the delayed input signal holding circuits; and a held signal selector circuit for integrating the plurality of held signals into a single signal.
Public/Granted literature
- US20090040848A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2009-02-12
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