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US07809038B2 Electro-absorption optical modulator integrated with a laser to produce high speed, uncooled, long distance, low power, 1550 nm optical communication device with optimized parameters 有权
电吸收光学调制器与激光器集成，产生高速，非冷却，长距离，低功耗，1550 nm光通信设备，具有优化参数

  • Patent Title: Electro-absorption optical modulator integrated with a laser to produce high speed, uncooled, long distance, low power, 1550 nm optical communication device with optimized parameters
  • Patent Title (中): 电吸收光学调制器与激光器集成，产生高速，非冷却，长距离，低功耗，1550 nm光通信设备，具有优化参数
  • Application No.: US11481918
    Application Date: 2006-07-07
  • Publication No.: US07809038B2
    Publication Date: 2010-10-05
  • Inventor: Shigeki Makino
  • Applicant: Shigeki Makino
  • Applicant Address: JP Yokohama-shi, Kanagawa
  • Assignee: Opnext Japan, Inc.
  • Current Assignee: Opnext Japan, Inc.
  • Current Assignee Address: JP Yokohama-shi, Kanagawa
  • Agency: Mattingly & Malur, P.C.
  • Priority: JP2006-105932 20060407
  • Main IPC: H01S3/04
  • IPC: H01S3/04 ;  H01S5/00
Electro-absorption optical modulator integrated with a laser to produce high speed, uncooled, long distance, low power, 1550 nm optical communication device with optimized parameters
Abstract:
In a conventional EA/DFB laser, since the temperature dependence of the operation wavelength of the EA portion is substantially different from that of the DFB portion, the temperature range over which a stable operation is possible is small. In the case of using the EA/DFB laser as a light emission device, an uncooled operation is not possible. An EA/DFB laser which does not require a temperature control mechanism is proposed.A quantum well structure in which a well layer made of any one of InGaAlAs, InGaAsP, and InGaAs, and a barrier layer made of either one of InGaAlAs or InAlAs is used for an optical absorption layer of an EA modulator. By properly determining detuning at a temperature of 25° C. and a composition wavelength of the barrier layer in the quantum well structure used for the optical absorption layer, it can be realized to suppress the insertion loss, maintain the extinction ratio, and reduce chirping simultaneously over a wide temperature range from −5° C. to 80° C.
Abstract(Chinese):

在传统的EA / DFB激光器中，由于EA部分的工作波长的温度依赖性与DFB部分的工作波长的温度依赖性基本不同，所以可以进行稳定操作的温度范围很小。 在使用EA / DFB激光器作为发光装置的情况下，不可能进行非冷却操作。 提出了不需要温度控制机构的EA / DFB激光器。 一种量子阱结构，其中由InGaAlAs，InGaAsP和InGaAs中的任一种制成的阱层以及由InGaAlAs或InAlAs中的任一种制成的势垒层用于EA调制器的光吸收层。 通过适当地确定在25℃的温度下的失谐和用于光吸收层的量子阱结构中的阻挡层的组成波长，可以实现抑制插入损耗，维持消光比和减少啁啾 同时在-5°C至80°C的宽温度范围内。

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