Invention Grant
- Patent Title: Power management block for use in a non-volatile memory system
- Patent Title (中): 用于非易失性存储器系统的电源管理块
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Application No.: US11616687Application Date: 2006-12-27
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Publication No.: US07809962B2Publication Date: 2010-10-05
- Inventor: Robert C. Chang , Bahman Qawami , Farshid Sabet-Sharghi , Sergey Yudin
- Applicant: Robert C. Chang , Bahman Qawami , Farshid Sabet-Sharghi , Sergey Yudin
- Applicant Address: US CA Milpitas
- Assignee: SanDisk Corporation
- Current Assignee: SanDisk Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Brinks Hofer Gilson & Lione
- Main IPC: G06F1/00
- IPC: G06F1/00 ; G06F9/00 ; G06F15/177 ; G06F1/24 ; G06F12/00

Abstract:
Methods and apparatus for enabling a power up process of a non-volatile memory to occur efficiently are disclosed. According to one aspect of the present invention, a method for utilizing a memory system that has a non-volatile memory with at least one reserved memory area includes providing power to the memory system, initializing the non-volatile memory, and writing a first signature into the reserved memory area. The first signature is arranged to indicate that the memory system was successfully initialized. In one embodiment, the method also includes executing a power down process on the memory system, and writing a second signature into the reserved memory area which indicates that the power down process has been executed.
Public/Granted literature
- US20070106919A1 Power Management Block for Use in a Non-Volatile Memory System Public/Granted day:2007-05-10
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