Invention Grant
US07811149B2 Method for fabricating carbon nanotube-based field emission device
有权
制造基于碳纳米管的场致发射器件的方法
- Patent Title: Method for fabricating carbon nanotube-based field emission device
- Patent Title (中): 制造基于碳纳米管的场致发射器件的方法
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Application No.: US11490810Application Date: 2006-07-21
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Publication No.: US07811149B2Publication Date: 2010-10-12
- Inventor: Peng Liu , Kai-Li Jiang , Kai Liu , Shou-Shan Fan
- Applicant: Peng Liu , Kai-Li Jiang , Kai Liu , Shou-Shan Fan
- Applicant Address: CN Beijing TW Tu-Cheng, Taipei Hsien
- Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Beijing TW Tu-Cheng, Taipei Hsien
- Agent Jeffrey T. Knapp
- Priority: CN200510101025 20051104
- Main IPC: H01J19/24
- IPC: H01J19/24

Abstract:
An exemplary method for fabricating a carbon nanotube-based field emission device is provided. A substrate is provided. A catalyst layer is formed on the substrate. A carbon nanotube array is grown from the catalyst layer. The carbon nanotube array includes a root portion and an opposite top portion respectively being in contact with and away from the catalyst layer. A cathode base with an adhesive layer formed thereon is provided. The top portion of the carbon nanotube array is immersed into the adhesive layer. The adhesive layer is solidified to embed the immersed top portion into the solidified adhesive layer. The root portion of the carbon nanotube array is exposed.
Public/Granted literature
- US20070103048A1 Method for fabricating carbon nanotube-based field emission device Public/Granted day:2007-05-10
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