Invention Grant
- Patent Title: Diodes, and methods of forming diodes
- Patent Title (中): 二极管和形成二极管的方法
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Application No.: US12128334Application Date: 2008-05-28
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Publication No.: US07811840B2Publication Date: 2010-10-12
- Inventor: Gurtej S. Sandhu , Bhaskar Srinivasan
- Applicant: Gurtej S. Sandhu , Bhaskar Srinivasan
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Some embodiments include methods of forming diodes. The methods may include oxidation of an upper surface of a conductive electrode to form an oxide layer over the conductive electrode. In some embodiments, the methods may include formation of an oxidizable material over a conductive electrode, and subsequent oxidation of the oxidizable material to form an oxide layer over the conductive electrode. In some embodiments, the methods may include formation of a metal halide layer over a conductive electrode. Some embodiments include diodes that contain a metal halide layer between a pair of diode electrodes.
Public/Granted literature
- US20090294967A1 Diodes, And Methods Of Forming Diodes Public/Granted day:2009-12-03
Information query
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