Invention Grant
- Patent Title: Semiconductor device and a method of manufacture therefor
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11167772Application Date: 2005-06-27
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Publication No.: US07811944B2Publication Date: 2010-10-12
- Inventor: Nace Rossi , Alvaro Maury
- Applicant: Nace Rossi , Alvaro Maury
- Applicant Address: US PA Allentown
- Assignee: Agere Systems Inc.
- Current Assignee: Agere Systems Inc.
- Current Assignee Address: US PA Allentown
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the aforementioned semiconductor device. The semiconductor device, in accordance with the principles of the present invention, may include a substrate, and a graded capping layer located over the substrate, wherein the graded capping layer includes at least two different layers, wherein first and second layers of the at least two different layers have different stress values.
Public/Granted literature
- US20050282372A1 Semiconductor device and a method of manufacture therefor Public/Granted day:2005-12-22
Information query
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