Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12382981Application Date: 2009-03-27
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Publication No.: US07811946B2Publication Date: 2010-10-12
- Inventor: Kunihiro Izuno , Shinsuke Sofue
- Applicant: Kunihiro Izuno , Shinsuke Sofue
- Applicant Address: JP Anan-shi
- Assignee: Nichia Corporation
- Current Assignee: Nichia Corporation
- Current Assignee Address: JP Anan-shi
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2003-424432 20031222
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469

Abstract:
The present invention provides a semiconductor device having a coating film of a predetermined thickness provided along the circumference of a semiconductor light emitting element, and provide a method for easily manufacturing the semiconductor device.A semiconductor light emitting element 2 that emits blue light is mounted face down on the top face of a pedestal 1, and a coating film 3 containing a YAG fluorescent material 6 that emits yellow light is placed so as to cover the top face and side face of the semiconductor light emitting element 2 and the top face of the pedestal 1. With the semiconductor light emitting element 2 and other elements placed between a first film 8 and a second film 9, the films are laminated in vacuum, thereby to fasten the coating film 3 onto the semiconductor light emitting element 2. Then the first film 8 and the second film 9 are removed, the coating film 3 is trimmed and the pedestal 1 is diced, thereby to obtain the semiconductor device 100 having the coating film 3 of a predetermined thickness provided along the circumference of the semiconductor light emitting element 2.
Public/Granted literature
- US20090239388A1 Semiconductor device and method for manufacturing the same Public/Granted day:2009-09-24
Information query
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