Invention Grant
US07812283B2 Laser irradiation method, laser irradiation apparatus, and method for fabricating semiconductor device
有权
激光照射方法,激光照射装置以及半导体装置的制造方法
- Patent Title: Laser irradiation method, laser irradiation apparatus, and method for fabricating semiconductor device
- Patent Title (中): 激光照射方法,激光照射装置以及半导体装置的制造方法
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Application No.: US10582013Application Date: 2005-03-24
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Publication No.: US07812283B2Publication Date: 2010-10-12
- Inventor: Koichiro Tanaka , Yoshiaki Yamamoto
- Applicant: Koichiro Tanaka , Yoshiaki Yamamoto
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2004-092933 20040326
- International Application: PCT/JP2005/006207 WO 20050324
- International Announcement: WO2005/093801 WO 20051006
- Main IPC: B23K26/06
- IPC: B23K26/06 ; H01L21/84

Abstract:
An object of the present invention is to provide a laser irradiation method and a laser irradiation apparatus for irradiating an irradiation surface with a linear beam having more homogeneous intensity by blocking a low-intensity part of the linear beam without forming the fringes due to the diffraction on the irradiation surface. In the laser irradiation, a laser beam emitted from a laser oscillator 101 passes through a slit 102 so as to block a low-intensity part of the laser beam, the traveling direction of the laser beam is bent by a mirror 103, and an image formed at the slit is projected to an irradiation surface 106 by a convex cylindrical lens 104.
Public/Granted literature
- US20070077696A1 Laser irradiation method and laser irradiation apparatus Public/Granted day:2007-04-05
Information query
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