Invention Grant
- Patent Title: Front and backside processed thin film electronic devices
- Patent Title (中): 前后处理薄膜电子器件
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Application No.: US12042066Application Date: 2008-03-04
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Publication No.: US07812353B2Publication Date: 2010-10-12
- Inventor: Hao-Chih Yuan , Guogong Wang , Mark A. Eriksson , Paul G. Evans , Max G. Lagally , Zhenqiang Ma
- Applicant: Hao-Chih Yuan , Guogong Wang , Mark A. Eriksson , Paul G. Evans , Max G. Lagally , Zhenqiang Ma
- Applicant Address: US WI Madison
- Assignee: Wisconsin Alumni Research Foundation
- Current Assignee: Wisconsin Alumni Research Foundation
- Current Assignee Address: US WI Madison
- Agency: Bell & Manning, LLC
- Main IPC: H01L29/73
- IPC: H01L29/73 ; H01L29/772 ; H01L29/78
Abstract:
This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.
Public/Granted literature
- US20080315253A1 FRONT AND BACKSIDE PROCESSED THIN FILM ELECTRONIC DEVICES Public/Granted day:2008-12-25
Information query
IPC分类:
