Invention Grant
- Patent Title: Light emitting diode
- Patent Title (中): 发光二极管
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Application No.: US11964556Application Date: 2007-12-26
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Publication No.: US07812361B2Publication Date: 2010-10-12
- Inventor: Zhen-Feng Xu , Guo-Fan Jin
- Applicant: Zhen-Feng Xu , Guo-Fan Jin
- Applicant Address: CN Beijing TW Tu-Cheng, Taipei Hsien
- Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Beijing TW Tu-Cheng, Taipei Hsien
- Agent Jeffrey T. Knapp
- Priority: CN200710074324 20070509
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A light emitting diode includes a substrate, a reflecting layer, an active layer, a transparent electrode, a first photonic crystal structure, and a second photonic crystal structure. The reflecting layer is disposed on the substrate. The active layer is disposed on the reflecting layer. The transparent electrode is disposed on the active layer and includes an upper surface and a lower surface. The lower surface of the transparent electrode combines with the active layer. The first photonic crystal structure is formed on the upper surface of the transparent electrode. The second photonic crystal structure formed in the active layer.
Public/Granted literature
- US20080277681A1 LIGHT EMITTING DIODE Public/Granted day:2008-11-13
Information query
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