Invention Grant
- Patent Title: Semiconductor device including a P-type field-effect transistor
- Patent Title (中): 包括P型场效应晶体管的半导体器件
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Application No.: US12400324Application Date: 2009-03-09
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Publication No.: US07812398B2Publication Date: 2010-10-12
- Inventor: Shinichi Saito , Digh Hisamoto , Yoshinobu Kimura , Nobuyuki Sugii , Ryuta Tsuchiya
- Applicant: Shinichi Saito , Digh Hisamoto , Yoshinobu Kimura , Nobuyuki Sugii , Ryuta Tsuchiya
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JPJP2006-159239 20060608
- Main IPC: H01L27/01
- IPC: H01L27/01 ; H01L27/12
Abstract:
A semiconductor device and manufacturing method of the same is provided in which the driving current of a pMOSFET is increased, through a scheme formed easily using an existing silicon process. A pMOSFET is formed with a channel in a direction on a (100) silicon substrate. A compressive stress is applied in a direction perpendicular to the channel by an STI.
Public/Granted literature
- US20090261412A1 Semiconductor Device and Manufacturing Method of the Same Public/Granted day:2009-10-22
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