A semiconductor device includes a first interlayer insulating film formed above a semiconductor substrate, a first source line formed on the first interlayer insulating film, a second interlayer insulating film formed on the first source line, a plurality of bit lines formed on the second interlayer insulating film so as to extend in a direction, the bit lines being arranged at same width and same width, a third interlayer insulating film formed above the bit lines, a second source line formed on the third interlayer insulating film, and a source shunt line formed between the second and third interlayer insulating films, the source shunt line electrically connecting the first and second source lines to each other, the source shunt line being located between the bit lines so as to extend in the same direction as the bit lines, the source shunt line including a width same as the bit lines.