Invention Grant
US07812416B2 Methods and apparatus having an integrated circuit attached to fused silica
有权
具有与熔融二氧化硅连接的集成电路的方法和装置
- Patent Title: Methods and apparatus having an integrated circuit attached to fused silica
- Patent Title (中): 具有与熔融二氧化硅连接的集成电路的方法和装置
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Application No.: US11803578Application Date: 2007-05-15
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Publication No.: US07812416B2Publication Date: 2010-10-12
- Inventor: Christophe Courcimault
- Applicant: Christophe Courcimault
- Applicant Address: US GA Atlanta
- Assignee: CardioMEMS, Inc.
- Current Assignee: CardioMEMS, Inc.
- Current Assignee Address: US GA Atlanta
- Agency: Ballard Spahr LLP
- Main IPC: H01L27/14
- IPC: H01L27/14

Abstract:
Disclosed are methods for attaching an integrated circuit to a substrate, and in particular, a fused silica substrate, along with apparatus fabricated using the methods. Exemplary apparatus comprises a glass substrate, a metallic layer disposed on the substrate, and an integrated circuit eutectically bonded to the glass substrate via the metallic layer. The integrated circuit and fused silica substrate form part of a hermetic sensor. In an exemplary sensor, a first trench is formed in a first substrate. A second trench that is deeper than the first trench is formed in the first substrate. A first plurality of electrodes are formed in the first trench. An integrated circuit is attached to the first substrate within the second trench using a solder preform. The integrated circuit may be attached to the first substrate by depositing a Cr/Au film onto either the integrated circuit or first substrate, depositing a Cr/Ni/Au film onto either the first substrate or integrated circuit, placing the an Au/Sn solder preform onto the Cr/Ni/Au film, positioning the integrated circuit on top of the soldered preform so that it contacts the Cr/Au film, and heating the assembly.
Public/Granted literature
- US20070267708A1 Methods and apparatus having an integrated circuit attached to fused silica Public/Granted day:2007-11-22
Information query
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