Invention Grant
- Patent Title: Wafer level package with die receiving through-hole and method of the same
- Patent Title (中): 晶圆级封装带芯片接收通孔及其方法
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Application No.: US11648787Application Date: 2007-01-03
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Publication No.: US07812434B2Publication Date: 2010-10-12
- Inventor: Wen-Kun Yang
- Applicant: Wen-Kun Yang
- Applicant Address: TW Hsinchu County
- Assignee: Advanced Chip Engineering Technology Inc
- Current Assignee: Advanced Chip Engineering Technology Inc
- Current Assignee Address: TW Hsinchu County
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Main IPC: H01L23/06
- IPC: H01L23/06
Abstract:
The present invention discloses a structure of package comprising: a substrate with a die receiving through hole; a base attached on a lower surface of the substrate; a die disposed within the die receiving through hole and attached on the base; a dielectric layer formed on the die and the substrate; a re-distribution layer (RDL) formed on the dielectric layer and coupled to the die; a protection layer formed over the RDL; and pluralities of pads formed on the protection layer and coupled to the RDL. The RDL is made from an alloy comprising Ti/Cu/Au alloy or Ti/Cu/Ni/Au alloy.
Public/Granted literature
- US20080157396A1 Wafer level package with die receiving through-hole and method of the same Public/Granted day:2008-07-03
Information query
IPC分类:
