Invention Grant
- Patent Title: Power semiconductor module for inverter circuit system
- Patent Title (中): 用于逆变器电路系统的功率半导体模块
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Application No.: US12060629Application Date: 2008-04-01
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Publication No.: US07812443B2Publication Date: 2010-10-12
- Inventor: Takeshi Tokuyama , Kinya Nakatsu , Ryuichi Saito
- Applicant: Takeshi Tokuyama , Kinya Nakatsu , Ryuichi Saito
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Crowell & Moring LLP
- Priority: JP2007-096536 20070402
- Main IPC: H01L23/10
- IPC: H01L23/10

Abstract:
A double-face-cooled semiconductor module with an upper arm and a lower arm of an inverter circuit includes first and second heat dissipation members, each having a heat dissipation surface on one side and a conducting member formed on another side through an insulation member. On the conducting member on the first dissipation plate is provided with a fixing portion that fixes a collector surface of the semiconductor chip and a gate conductor connected to a gate terminal of the semiconductor module. The gate electrode terminal and the gate conductor are wire bonded. The conducting member on the second heat dissipation member is connected to an emitter surface of the semiconductor chip connected to the first heat dissipation member. The productivity and reliability are improved by most of formation operations for the upper and lower arms series circuit on one of the heat dissipation member.
Public/Granted literature
- US20080251909A1 Power Semiconductor Module for Inverter Circuit System Public/Granted day:2008-10-16
Information query
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