Invention Grant
- Patent Title: Electrode with nano-sized structures
- Patent Title (中): 具有纳米尺寸结构的电极
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Application No.: US11391993Application Date: 2006-03-28
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Publication No.: US07812450B2Publication Date: 2010-10-12
- Inventor: Ga-Lane Chen
- Applicant: Ga-Lane Chen
- Applicant Address: TW Tu-Cheng, Taipei Hsien
- Assignee: Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: TW Tu-Cheng, Taipei Hsien
- Agent Jeffrey T. Knapp
- Priority: CN200510033999 20050402
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
The present invention relates to an electrode 100 with high capacitance. The electrode includes a conducting substrate 10 with a number of nano-sized structures 13 thereon and a coating 15. The nano-sized structures are concave-shaped and are of a size in the range from 2 nanometers to 50 nanometers. The nano-sized structures are configured for increasing specific surface area of the electrode. The present invention also provides a method for making the above-described electrode. The method includes steps of providing a conducting substrate, forming a number of nano-sized structures on the conducting substrate, and forming a coating on the nano-sized structures.
Public/Granted literature
- US20060220769A1 Electrode and method for making the same Public/Granted day:2006-10-05
Information query
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