Invention Grant
- Patent Title: Light-emitting device and manufacturing method thereof
- Patent Title (中): 发光元件及其制造方法
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Application No.: US11987176Application Date: 2007-11-28
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Publication No.: US07812516B2Publication Date: 2010-10-12
- Inventor: Tsukasa Maruyama , Tetsuya Ikuta
- Applicant: Tsukasa Maruyama , Tetsuya Ikuta
- Applicant Address: JP Tokyo
- Assignee: Dowa Electronics Materials Co., Ltd.
- Current Assignee: Dowa Electronics Materials Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Rader, Fishman & Grauer PLLC
- Priority: JP2006-320129 20061128
- Main IPC: H05B33/00
- IPC: H05B33/00
Abstract:
A light-emitting device includes: a light-emitting element whose main emission wavelength is 410 nm or less; and one phosphor layer or more stacked to cover a light-emitting surface of the light-emitting element and containing phosphors that absorb light from the light-emitting element and wavelength-convert the absorbed light to emit light.
Public/Granted literature
- US20080122343A1 Light-emitting device and manufacturing method thereof Public/Granted day:2008-05-29
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