Invention Grant
- Patent Title: Low noise amplifier having improved linearity
- Patent Title (中): 低噪声放大器具有改善的线性度
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Application No.: US11976911Application Date: 2007-10-29
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Publication No.: US07812672B2Publication Date: 2010-10-12
- Inventor: Seung-Wook Lee , Deok Hee Lee , Eunseok Song , Joonbae Park , Kyeongho Lee
- Applicant: Seung-Wook Lee , Deok Hee Lee , Eunseok Song , Joonbae Park , Kyeongho Lee
- Applicant Address: US CA San Jose
- Assignee: GCT Semiconductor, Inc.
- Current Assignee: GCT Semiconductor, Inc.
- Current Assignee Address: US CA San Jose
- Priority: KR10-2006-0105463 20061030
- Main IPC: H03F3/30
- IPC: H03F3/30

Abstract:
Embodiments of the present general inventive concept include a low noise amplifier and method with an improved linearity while reducing a noise disadvantage (e.g., increase). One embodiment of a low noise amplifier can include a first transistor to receive an input signal at a control terminal thereof, a second transistor having a first terminal coupled to a second terminal of the first transistor, an envelope detector to output a control signal corresponding to a characteristic of the input signal and an envelope amplifier to amplify the control signal to be applied to a control terminal of the second transistor.
Public/Granted literature
- US20080252377A1 Low noise amplifier having improved linearity Public/Granted day:2008-10-16
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