Invention Grant
US07812895B2 Thin film transistor (TFT) array panel with TFTs having varying leakage currents
有权
薄膜晶体管(TFT)阵列面板,TFT具有变化的漏电流
- Patent Title: Thin film transistor (TFT) array panel with TFTs having varying leakage currents
- Patent Title (中): 薄膜晶体管(TFT)阵列面板,TFT具有变化的漏电流
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Application No.: US11274994Application Date: 2005-11-16
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Publication No.: US07812895B2Publication Date: 2010-10-12
- Inventor: Chung Yi
- Applicant: Chung Yi
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2005-0001609 20050107
- Main IPC: G02F1/136
- IPC: G02F1/136 ; H01L31/00 ; H01L27/14

Abstract:
A thin film transistor (TFT) array panel is provided, which includes a substrate, a plurality of gate lines including gate electrodes, a plurality of data lines intersecting the gate lines; a plurality of TFTs having semiconductors, connected to the gate lines and the data lines, and a plurality of pixel electrodes connected to the TFTs, wherein the TFTs have varying leakage currents, and the TFTs are randomly distributed.
Public/Granted literature
- US20060152644A1 Thin film transistor array panel Public/Granted day:2006-07-13
Information query
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