Invention Grant
- Patent Title: Enhanced planarization liftoff structure and method for making the same
- Patent Title (中): 增强平面化提升结构及其制作方法
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Application No.: US11644159Application Date: 2006-12-22
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Publication No.: US07813080B2Publication Date: 2010-10-12
- Inventor: Jeffrey S. Lille , Amanda Baer , John Jaekoyun Yang
- Applicant: Jeffrey S. Lille , Amanda Baer , John Jaekoyun Yang
- Applicant Address: NL Amsterdam
- Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Main IPC: G11B5/127
- IPC: G11B5/127

Abstract:
Systems and methods for enhanced planarization liftoff structures. In accordance with a first method embodiment, a method for manufacturing a pole tip for magnetic recording comprises accessing a wafer comprising a plurality of pole tips and a plurality of pole tip masks corresponding to the plurality of pole tips. Non magnetic material is filled adjacent to the plurality of pole tips. Material adjacent to the plurality of pole tips is etched. Subsequent to the etching, the wafer is planarized to a level equal to or higher than a level of the trailing edges of the plurality of pole tips. The enhanced liftoff structure enables decreased planarization processing, resulting in a decreased process window. As a beneficial result, manufacturing throughput and quality are improved.
Public/Granted literature
- US20080151422A1 Enhanced planarization liftoff structure and method for making the same Public/Granted day:2008-06-26
Information query
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