Invention Grant
- Patent Title: ESD unit protection cell for distributed amplifiers
- Patent Title (中): 用于分布式放大器的ESD单元保护单元
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Application No.: US11533325Application Date: 2006-09-19
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Publication No.: US07813092B2Publication Date: 2010-10-12
- Inventor: Yintat Ma , Guann-Pyng Li
- Applicant: Yintat Ma , Guann-Pyng Li
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Orrick, Herrington & Sutcliffe LLP
- Main IPC: H02H9/00
- IPC: H02H9/00

Abstract:
Improved protection circuits are provided for use as voltage overload protection circuits, ESD protection circuits for RF input pins, and unit protection cells for distributed amplifiers. Preferably, the protection circuits include a positive threshold voltage trigger used to trigger a switch wherein the trigger includes a diode string in series with a resistor and the switch includes a bipolar transistor switch in series with a single reverse diode. Alternatively, the trigger includes a diode string in series with a single diode and a single resistor, and is used to trigger a Darlington pair transistor switch in series with a single reverse diode. In another embodiment, a Darlington pair transistor switch is triggered by a capacitor. In use with distributive amplifiers, the ESD protection circuits are preferably absorbed inside the artificial transmission lines of the distributed amplifier.
Public/Granted literature
- US20070070562A1 ESD UNIT PROTECTION CELL FOR DISTRIBUTED AMPLIFIERS Public/Granted day:2007-03-29
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