Invention Grant
- Patent Title: Magneto resistance element and magnetic random access memory
- Patent Title (中): 磁阻元件和磁性随机存取存储器
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Application No.: US11661205Application Date: 2005-08-26
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Publication No.: US07813164B2Publication Date: 2010-10-12
- Inventor: Tadahiko Sugibayashi , Takeshi Honda , Noboru Sakimura
- Applicant: Tadahiko Sugibayashi , Takeshi Honda , Noboru Sakimura
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2004-247473 20040826
- International Application: PCT/JP2005/015516 WO 20050826
- International Announcement: WO2006/022367 WO 20060302
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A magneto-resistance element includes a free layer, a fixed layer and a non-magnetic layer interposed between the free layer and the fixed layer. The free layer has a first magnetic layer, a second magnetic layer, a third magnetic layer, a first non-magnetic layer interposed between the first magnetic layer and the second magnetic layer, and a second non-magnetic layer interposed between the second magnetic layer and the third magnetic layer. The first magnetic layer, the second magnetic layer and the third magnetic layer are coupled such that spontaneous magnetizations have a helical structure.
Public/Granted literature
- US20080094880A1 Magneto-Resistance Element And Magnetic Random Access Memory Public/Granted day:2008-04-24
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