Invention Grant
US07813164B2 Magneto resistance element and magnetic random access memory 有权
磁阻元件和磁性随机存取存储器

Magneto resistance element and magnetic random access memory
Abstract:
A magneto-resistance element includes a free layer, a fixed layer and a non-magnetic layer interposed between the free layer and the fixed layer. The free layer has a first magnetic layer, a second magnetic layer, a third magnetic layer, a first non-magnetic layer interposed between the first magnetic layer and the second magnetic layer, and a second non-magnetic layer interposed between the second magnetic layer and the third magnetic layer. The first magnetic layer, the second magnetic layer and the third magnetic layer are coupled such that spontaneous magnetizations have a helical structure.
Public/Granted literature
Information query
Patent Agency Ranking
0/0