Invention Grant
US07813166B2 Controlled value reference signal of resistance based memory circuit
有权
基于电阻的存储电路的受控值参考信号
- Patent Title: Controlled value reference signal of resistance based memory circuit
- Patent Title (中): 基于电阻的存储电路的受控值参考信号
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Application No.: US12164436Application Date: 2008-06-30
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Publication No.: US07813166B2Publication Date: 2010-10-12
- Inventor: Seong-Ook Jung , Jisu Kim , Jee-Hwan Song , Seung H. Kang , Sei Seung Yoon
- Applicant: Seong-Ook Jung , Jisu Kim , Jee-Hwan Song , Seung H. Kang , Sei Seung Yoon
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Michelle Gallardo; Nicholas J. Pauley; Sam Talpalatsky
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
Systems and methods of controlled value reference signals of resistance based memory circuits are disclosed. In a particular embodiment, a circuit device is disclosed that includes a first input configured to receive a reference control signal. The circuit device also includes an output responsive to the first input to selectively provide a controlled value reference voltage to a sense amplifier coupled to a resistance based memory cell.
Public/Granted literature
- US20090323405A1 Controlled Value Reference Signal of Resistance Based Memory Circuit Public/Granted day:2009-12-31
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