Invention Grant
- Patent Title: Semiconductor memory
- Patent Title (中): 半导体存储器
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Application No.: US12272118Application Date: 2008-11-17
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Publication No.: US07813182B2Publication Date: 2010-10-12
- Inventor: Yoshihiko Kamata , Takayuki Harima , Yasuhiko Honda
- Applicant: Yoshihiko Kamata , Takayuki Harima , Yasuhiko Honda
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-300474 20071120
- Main IPC: G11C16/28
- IPC: G11C16/28
Abstract:
A semiconductor memory has a first-stage amplifier circuit, wherein data stored in a memory cells is read based on a potential between an amplifier input MOS transistor and an amplifier reference MOS transistor, the potential being outputted from the first-stage amplifier circuit.
Public/Granted literature
- US20090135657A1 SEMICONDUCTOR MEMORY Public/Granted day:2009-05-28
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