Invention Grant
US07813190B2 Input circuit of semiconductor memory device ensuring enabled data input buffer during data input 有权
半导体存储器件的输入电路确保在数据输入期间启用数据输入缓冲器

  • Patent Title: Input circuit of semiconductor memory device ensuring enabled data input buffer during data input
  • Patent Title (中): 半导体存储器件的输入电路确保在数据输入期间启用数据输入缓冲器
  • Application No.: US12206020
    Application Date: 2008-09-08
  • Publication No.: US07813190B2
    Publication Date: 2010-10-12
  • Inventor: Sang Hee Lee
  • Applicant: Sang Hee Lee
  • Applicant Address: KR Kyoungki-do
  • Assignee: Hynix Semiconductor Inc.
  • Current Assignee: Hynix Semiconductor Inc.
  • Current Assignee Address: KR Kyoungki-do
  • Agency: Ladas & Parry LLP
  • Priority: KR10-2007-0135578 20071221
  • Main IPC: G11C16/04
  • IPC: G11C16/04
Input circuit of semiconductor memory device ensuring enabled data input buffer during data input
Abstract:
An input circuit of a semiconductor memory device that prevents data from being input into a data input buffer prior to the enablement of the data input buffer. The input circuit includes an input buffer enabling control unit that generates an input buffer enabling signal which is enabled before a point at which data is input and which has an enabling period of at least a predetermined burst length. A data input buffer is controlled by the input buffer enabling signal, and the data input buffer buffers and outputs the data during the enabling period of the input buffer enabling signal.
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