An integrated semiconductor memory contains a multiplicity of bit line pairs which each comprise a first bit line and a second bit line. Sense amplifiers are each coupled to one of the bit line pairs for evaluating a signal on the first and second bit lines. A data line pair coupled to at least one of the multiplicity of bit line pairs for outputting a datum is furthermore provided. A correction device is connected on the output side to the data line pair or to at least one bit line pair. The device is embodied for feeding a correction signal onto the line pair.