Invention Grant
US07813200B2 Sense amplifier control circuit for semiconductor memory device and method for controlling sense amplifier control circuit
失效
用于半导体存储器件的感测放大器控制电路和用于控制读出放大器控制电路的方法
- Patent Title: Sense amplifier control circuit for semiconductor memory device and method for controlling sense amplifier control circuit
- Patent Title (中): 用于半导体存储器件的感测放大器控制电路和用于控制读出放大器控制电路的方法
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Application No.: US12217044Application Date: 2008-06-30
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Publication No.: US07813200B2Publication Date: 2010-10-12
- Inventor: Ju-Young Seo
- Applicant: Ju-Young Seo
- Applicant Address: KR
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR
- Agency: Blakely, Sokoloff, Taylor & Zafman
- Priority: KR10-2008-0038102 20080424
- Main IPC: G11C7/22
- IPC: G11C7/22
Abstract:
A sense amplifier control circuit for a memory device is provided. The sense amplifier control circuit for a memory device including: a level detection unit configured to generate a level detection signal by detecting a core voltage level in an active operation interval; and a control unit configured to generate a pulse signal to control a sensing start time of a bit line detection signal by varying a delay time according to the level detection signal.
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