Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US12212066Application Date: 2008-09-17
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Publication No.: US07813205B2Publication Date: 2010-10-12
- Inventor: Atsumasa Sako
- Applicant: Atsumasa Sako
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Priority: JP2005-044895 20050222
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/04 ; G11C11/34

Abstract:
A semiconductor memory device is provided for minutely changing a refresh interval according to a detected temperature and thereby lowering its power consumption. A temperature detector detects a temperature of a chip and outputs the corresponding temperature signal. A reference temperature signal output unit outputs the corresponding reference temperature signal with each of different reference temperatures to be compared with the chip temperature according to a selection signal. A temperature comparison unit compares the chip temperature with the reference temperature through the temperature signal and the reference temperature signal. A selection signal output unit outputs the selection signal according to the compared result of the temperature comparison unit. A refresh interval control unit changes the refresh interval according to the compared result of the temperature comparison unit.
Public/Granted literature
- US20090022002A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2009-01-22
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