Invention Grant
US07813214B2 Semiconductor memory device 有权
半导体存储器件

Semiconductor memory device
Abstract:
A reference cell outputs a reference current of a data reading current of a memory cell. A trimming data in accordance with the reference current is memorized in a non-volatile memory cell. A standard current generator outputs a standard current whose current quantity is adjusted in accordance with the trimming data. A current comparator compares the standard current to the reference current. The output of the reference current from the reference cell is adjusted through a reference cell adjuster based on a result of the comparison by the current comparator.
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