Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US12236052Application Date: 2008-09-23
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Publication No.: US07813214B2Publication Date: 2010-10-12
- Inventor: Shuhei Noichi
- Applicant: Shuhei Noichi
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2005-357962 20051212
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
A reference cell outputs a reference current of a data reading current of a memory cell. A trimming data in accordance with the reference current is memorized in a non-volatile memory cell. A standard current generator outputs a standard current whose current quantity is adjusted in accordance with the trimming data. A current comparator compares the standard current to the reference current. The output of the reference current from the reference cell is adjusted through a reference cell adjuster based on a result of the comparison by the current comparator.
Public/Granted literature
- US20090034332A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2009-02-05
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