Invention Grant
US07813462B2 Method of defining semiconductor fabrication process utilizing transistor inverter delay period
有权
利用晶体管反相器延迟周期定义半导体制造工艺的方法
- Patent Title: Method of defining semiconductor fabrication process utilizing transistor inverter delay period
- Patent Title (中): 利用晶体管反相器延迟周期定义半导体制造工艺的方法
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Application No.: US11550878Application Date: 2006-10-19
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Publication No.: US07813462B2Publication Date: 2010-10-12
- Inventor: Elida Isabel de Obaldia , Robert B. Staszewski , Dirk Leipold
- Applicant: Elida Isabel de Obaldia , Robert B. Staszewski , Dirk Leipold
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Frederick J. Telecky, Jr.; Wade J. Brady, III
- Main IPC: H03D3/24
- IPC: H03D3/24

Abstract:
A novel method and apparatus for defining process variation in a digital RF processor (DRP). The invention is well suited for use in highly integrated system on a chip (SoC) radio solutions that incorporate a very large amount of digital logic circuitry. The method and apparatus provide direct measurement of fabrication process variation in circuits without requiring any additional test equipment by utilizing a time to digital converter (TDC) circuit already present in the chip. The TDC circuit relies on the time delay in an inverter chain to sample a high speed CKV clock using a slow FREF clock. Calculation of inverse time provides a direct correlation for fabrication process variation in each die.
Public/Granted literature
- US20070110194A1 METHOD OF DEFINING SEMICONDUCTOR FABRICATION PROCESS UTILIZING TRANSISTOR INVERTER DELAY PERIOD Public/Granted day:2007-05-17
Information query
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