Invention Grant
US07813539B2 Method and apparatus for analyzing defect data and a review system
有权
用于分析缺陷数据的方法和装置以及审查系统
- Patent Title: Method and apparatus for analyzing defect data and a review system
- Patent Title (中): 用于分析缺陷数据的方法和装置以及审查系统
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Application No.: US10672010Application Date: 2003-09-25
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Publication No.: US07813539B2Publication Date: 2010-10-12
- Inventor: Hisae Shibuya , Yuji Takagi
- Applicant: Hisae Shibuya , Yuji Takagi
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Townsend and Townsend and Crew LLP
- Priority: JP2002-282173 20020927
- Main IPC: G06K9/00
- IPC: G06K9/00

Abstract:
In a process for manufacturing a semiconductor wafer, defect distribution state analysis is performed so as to facilitate identification of the defect cause including a device cause and a process cause by classifying the defect distribution state according to the defect position coordinates detected by the inspection device, into one of the distribution characteristic categories: repeated defects, clustered defects, arc-shaped regional defects, radial regional defects, line type regional defects, ring and blob type regional defects, and random defects.
Public/Granted literature
- US20040064269A1 Method and apparatus for analyzing defect data and a review system Public/Granted day:2004-04-01
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