Invention Grant
- Patent Title: Single sector write operation in flash memory
- Patent Title (中): 闪存中单扇区写操作
-
Application No.: US12141004Application Date: 2008-06-17
-
Publication No.: US07814265B2Publication Date: 2010-10-12
- Inventor: Hooshmand Torabi
- Applicant: Hooshmand Torabi
- Applicant Address: US CA Santa Ana
- Assignee: STEC, Inc.
- Current Assignee: STEC, Inc.
- Current Assignee Address: US CA Santa Ana
- Agency: McDermott Will & Emery LLP
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
A flash storage device having improved write performance is provided. The device includes a storage block having a plurality of physical pages and a controller for mapping the plurality of physical pages to a plurality of logical addresses and for writing data to the plurality of physical pages. When updating data previously written to one of the plurality of logical addresses, the controller is configured to write the updated data to a second physical page which is mapped to the logical address. Each of the logical addresses may be associated with a pointer field, which is for storing a pointer value indicating the invalidity of a physical page and/or the location of another physical page.
Public/Granted literature
- US20080288717A1 SINGLE SECTOR WRITE OPERATION IN FLASH MEMORY Public/Granted day:2008-11-20
Information query