Invention Grant
- Patent Title: Wafer characteristics via reflectometry
- Patent Title (中): 通过反射计的晶圆特性
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Application No.: US10535291Application Date: 2003-03-14
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Publication No.: US07815862B2Publication Date: 2010-10-19
- Inventor: Bhushan L. Sopori
- Applicant: Bhushan L. Sopori
- Applicant Address: US CO Golden
- Assignee: Alliance for Sustainable Energy, LLC
- Current Assignee: Alliance for Sustainable Energy, LLC
- Current Assignee Address: US CO Golden
- Agent John C. Stolpa; Paul J. White; Mark D. Trenner
- International Application: PCT/US03/07804 WO 20030314
- International Announcement: WO2004/084279 WO 20040930
- Main IPC: G01N33/00
- IPC: G01N33/00

Abstract:
Various exemplary methods (800, 900, 1000, 1100) are directed to determining wafer thickness and/or wafer surface characteristics. An exemplary method (900) includes measuring reflectance of a wafer and comparing the measured reflectance to a calculated reflectance or a reflectance stored in a database. Another exemplary method (800) includes positioning a wafer on a reflecting support to extend a reflectance range. An exemplary device (200) has an input (210), analysis modules (222-228) and optionally a database (230). Various exemplary reflectometer chambers (1300, 1400) include radiation sources positioned at a first altitudinal angle (1308, 1408) and at a second altitudinal angle (1312, 1412). An exemplary method includes selecting radiation sources positioned at various altitudinal angles. An exemplary element (1650, 1850) includes a first aperture (1654, 1854) and a second aperture (1658, 1858) that can transmit reflected radiation to a fiber and an imager, respectfully.
Public/Granted literature
- US20060063262A1 Wafer characteristics via reflectometry Public/Granted day:2006-03-23
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