Invention Grant
US07816062B2 Method and apparatus for semiconductor device production process monitoring and method and apparatus for estimating cross sectional shape of a pattern
有权
用于半导体器件生产过程监控的方法和装置以及用于估计图案的截面形状的方法和装置
- Patent Title: Method and apparatus for semiconductor device production process monitoring and method and apparatus for estimating cross sectional shape of a pattern
- Patent Title (中): 用于半导体器件生产过程监控的方法和装置以及用于估计图案的截面形状的方法和装置
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Application No.: US11592175Application Date: 2006-11-03
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Publication No.: US07816062B2Publication Date: 2010-10-19
- Inventor: Wataru Nagatomo , Hidetoshi Morokuma , Atsushi Miyamoto , Hideaki Sasazawa
- Applicant: Wataru Nagatomo , Hidetoshi Morokuma , Atsushi Miyamoto , Hideaki Sasazawa
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2005-320319 20051104
- Main IPC: G03F9/00
- IPC: G03F9/00 ; G03C5/00 ; G21G5/00

Abstract:
In an exposure process or etching process, an image feature amount useful for estimating a cross-sectional shape of a target evaluation pattern, process conditions for the pattern, or device characteristics of the pattern is calculated from an SEM image. The image feature amount is compared with learning data that correlates data preliminarily stored in a database, which data includes cross-sectional shapes of patterns, process conditions for the patterns, or device characteristics of the patterns, to the image feature amount calculated from the SEM image. Thereby, the cross-sectional shape of the target evaluation pattern, the process conditions of the pattern, or the device characteristics of the pattern are nondestructively calculated.
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