Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12457165Application Date: 2009-06-02
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Publication No.: US07816177B2Publication Date: 2010-10-19
- Inventor: Yukiharu Takeuchi , Hidenori Takayanagi
- Applicant: Yukiharu Takeuchi , Hidenori Takayanagi
- Applicant Address: JP Nagano
- Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee Address: JP Nagano
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2004-011666 20040120
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/48

Abstract:
In a semiconductor device, via holes are formed around a chip buried in a package, one end of a conductor filled in the via hole is covered with a pad portion exposed to the outside, and a wiring layer connected to the other end of the conductor is formed. The portion (pad portion) of the wiring layer which correspond to the conductor is exposed from a protective film, or an external connection terminal is bonded to the top of the pad portion. Electrode terminals of the chip are connected to the wiring layer, and the opposite surface of the chip is exposed to the outside.
Public/Granted literature
- US20090246909A1 Semiconductor device and method of manufacturing the same Public/Granted day:2009-10-01
Information query
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