Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
-
Application No.: US12289145Application Date: 2008-10-21
-
Publication No.: US07816242B2Publication Date: 2010-10-19
- Inventor: Mizuki Ono
- Applicant: Mizuki Ono
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2004-273509 20040921
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/4763 ; H01L23/62
Abstract:
A semiconductor device includes a plate of semiconductor layer, an insulator layer formed on the plate of semiconductor layer and brought into contact with the plate of semiconductor layer by at least two adjacent faces, a thickness of the insulator layer in the vicinity of a boundary line between the two adjacent faces being larger than that of the insulator layer in a region other than the vicinity of the boundary line, and a band of conductor layer formed facing a middle portion of the plate-like semiconductor layer via the insulator layer.
Public/Granted literature
- US20090061610A1 Semiconductor device and method of manufacturing the same Public/Granted day:2009-03-05
Information query
IPC分类:
