Invention Grant
- Patent Title: Method for manufacturing electro-optic device substrate with titanium silicide regions formed within
- Patent Title (中): 用于制造其中形成有硅化钛区域的电光器件衬底的方法
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Application No.: US11758365Application Date: 2007-06-05
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Publication No.: US07816258B2Publication Date: 2010-10-19
- Inventor: Minoru Moriwaki
- Applicant: Minoru Moriwaki
- Applicant Address: JP Tokyo
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge PLC
- Priority: JP2006-191089 20060712
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
An electro-optic device substrate includes a base and a TFT element having a source region and a drain region disposed on the base. The TFT element includes a silicon layer in the source region or the drain region, and the silicon layer at least partially includes a silicided portion. The electro-optic device substrate also includes a metal wire connected to the silicided portion of the silicon layer.
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