An embodiment of a system and method produces a random half pitched interconnect layout. A first normal-pitch mask and a second normal-pitch mask are created from a metallization layout having random metal shapes. The lines and spaces of the first mask are printed at normal pitch and then the lines are shrunk to half pitch on mask material. First spacers are used to generate a half pitch dimension along the outside of the lines of the first mask. The mask material outside of the first spacer pattern is partially removed. The spacers are removed and the process is repeated with the second mask. The mask material remains at the locations of first set of spacers and/or the second set of spacers to create a half pitch interconnect mask with constant spaces.In an embodiment, the half pitch interconnect mask is used to create a metallization interconnect layer with area of constant spacing and area of metallization. In an embodiment, an insulating dielectric is left unetched in the areas of constant spacing, and a conductor is deposited inside the etched out areas.