Invention Grant
- Patent Title: Capacitive gas sensor and method of fabricating the same
- Patent Title (中): 电容式气体传感器及其制造方法
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Application No.: US12502824Application Date: 2009-07-14
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Publication No.: US07816681B2Publication Date: 2010-10-19
- Inventor: Jaehyun Moon , Su Jae Lee , Jin Ah Park , Tae Hyoung Zyung
- Applicant: Jaehyun Moon , Su Jae Lee , Jin Ah Park , Tae Hyoung Zyung
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2008-0121625 20081203; KR10-2009-0025688 20090326
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L29/22

Abstract:
A capacitive gas sensor and a method of fabricating the same are provided. The capacitive gas sensor includes an insulating substrate, a metal electrode and a micro thin-film heater wire integrally formed on the same plane of the insulating substrate, and an oxide detection layer coated on the metal electrode and the micro thin-film heater wire. The fabrication method includes depositing a metal layer on an insulating substrate, etching the metal layer so that a metal electrode and a micro thin-film heater wire form an interdigital transducer on the same plane, and forming a nano crystal complex oxide thin film or a complex oxide nano fiber coating layer on the metal electrode and the micro thin-film heater wire as a detecting layer. The capacitive gas sensor can be easily fabricated and can have excellent characteristics such as high sensitivity, high selectivity, high stability, and low power consumption.
Public/Granted literature
- US20100133528A1 CAPACITIVE GAS SENSOR AND METHOD OF FABRICATING THE SAME Public/Granted day:2010-06-03
Information query
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